Publications by authors named "Whiticar A"

Majorana zero modes are leading candidates for topological quantum computation due to non-local qubit encoding and non-abelian exchange statistics. Spatially separated Majorana modes are expected to allow phase-coherent single-electron transport through a topological superconducting island via a mechanism referred to as teleportation. Here we experimentally investigate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm interferometer.

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We demonstrate concomitant measurement of phase-dependent critical current and Andreev bound state spectrum in a highly transmissive InAs Josephson junction embedded in a dc superconducting quantum interference device (SQUID). Tunneling spectroscopy reveals Andreev bound states with near unity transmission probability. A nonsinusoidal current-phase relation is derived from the Andreev spectrum, showing excellent agreement with the one extracted from the SQUID critical current.

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Majorana zero modes-quasiparticle states localized at the boundaries of topological superconductors-are expected to be ideal building blocks for fault-tolerant quantum computing. Several observations of zero-bias conductance peaks measured by tunnelling spectroscopy above a critical magnetic field have been reported as experimental indications of Majorana zero modes in superconductor-semiconductor nanowires. On the other hand, two-dimensional systems offer the alternative approach of confining Majorana channels within planar Josephson junctions, in which the phase difference φ between the superconducting leads represents an additional tuning knob that is predicted to drive the system into the topological phase at lower magnetic fields than for a system without phase bias.

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We present measurements of one-dimensional superconductor-semiconductor Coulomb islands, fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer. When tuned via electrostatic side gates to regimes without subgap states, Coulomb blockade reveals Cooper-pair mediated transport. When subgap states are present, Coulomb peak positions and heights oscillate in a correlated way with magnetic field and gate voltage, as predicted theoretically, with (anti)crossings in (parallel) transverse magnetic field indicating Rashba-type spin-orbit coupling.

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We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length.

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We report an experimental study of the scaling of zero-bias conductance peaks compatible with Majorana zero modes as a function of magnetic field, tunnel coupling, and temperature in one-dimensional structures fabricated from an epitaxial semiconductor-superconductor heterostructure. Results are consistent with theory, including a peak conductance that is proportional to tunnel coupling, saturates at 2e^{2}/h, decreases as expected with field-dependent gap, and collapses onto a simple scaling function in the dimensionless ratio of temperature and tunnel coupling.

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Metal nanoparticles (NPs), in particular gold NPs, are often used in the fabrication process of semiconductor nanowires. Besides being able to induce the 1D crystallization of new material, it is highly beneficial if the NPs can be used to dictate the position and diameter of the final nanowire structure. To achieve well-defined NP arrays of varying diameter and pitch distances for nanowire growth, it is necessary to understand and control the effect that a pre-growth annealing process may have on the pre-defined NP arrays.

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Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45-50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction.

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