Phase Transitions in Boron Carbide.

The idealized rhombohedral unit cell of boron carbide is formed by a 12-atom icosahedron and a 3-atom linear chain. Phase transitions are second order and caused by the exchange of B and C sites or by vacancies in the structure. Nevertheless, the impact of such minimal structural changes on the properties can be significant.

Systematic error in conventionally measured Raman spectra of boron carbide-A general issue in solid state Raman spectroscopy.

Solid state Raman spectroscopy requires careful attention to the penetration depth of exciting laser radiation. In cases like semiconducting boron carbide and metallic hexaborides, high fundamental absorption above the bandgap and reflectivity R ≈ 1 beyond the plasma edge respectively prevent the excitation of bulk phonons largely. Thus, correspondingly measured spectra stem preferably from surface scattering.

High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor.

Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking.

Dynamical conductivity of boron carbide: heavily damped plasma vibrations.

The FIR reflectivity spectra of boron carbide, measured down to ω~10 cm(-1) between 100 and 800 K, are essentially determined by heavily damped plasma vibrations. The spectra are fitted applying the classical Drude-Lorentz theory of free carriers. The fitting Parameter Π=ωp/ωτ yields the carrier densities, which are immediately correlated with the concentration of structural defects in the homogeneity range.

Advanced microstructure of boron carbide.

The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.

Isotopic phonon effects in LaB6-LaB6 do not possess cubic symmetry and show a non-random isotope distribution.

The isotopic phonon effects in LaB(6) are investigated on the Raman spectra of a series of high-quality single crystals with systematically varied contents of (10)B and (11)B isotopes. A detailed group theoretical analysis enlightens the correlation between distortions of the B(6) octahedra and the splitting or broadening of phonon modes. It is evident that LaB(6) does not have cubic symmetry as assumed so far.

Is the established structure of α-rhombohedral boron correct? Comparative study of IR-active phonons with B6O, B4.3C and β-rhombohedral boron.

The established structure of α-rhombohedral boron, based on one B(12) icosahedron per unit cell only, is put in question. A careful evaluation of the IR-active phonons in comparison with B(6)O, B(4.3)C and β-rhombohedral boron makes it evident that-aside from the B(12) icosahedra-the α-rhombohedral boron structure also contains single boron atoms.

Isotopic phonon effects in β-rhombohedral boron--non-statistical isotope distribution.

On the basis of the spectra of IR- and Raman-active phonons, the isotopic phonon effects in β-rhombohedral boron are analysed for polycrystalline (10)B- and (11)B-enriched samples of different origin and high-purity (nat)B single crystals. Intra- and inter-icosahedral B-B vibrations are harmonic, hence meeting the virtual crystal approximation (VCA) requirements. Deviations from the phonon shift expected according to the VCA are attributed to the anharmonic share of the lattice vibrations.

Superconductivity in boron carbide? Clarification by low-temperature MIR/FIR spectra.

The electronic structure and phonon density of B(13)B(2) boron carbide calculated by Calandra et al (2004 Phys. Rev. B 69 224505) defines this compound as metallic, and the authors predict superconductivity with T(C)s up to 36.

Raman scattering and isotopic phonon effects in dodecaborides.

The Raman spectra of numerous dodecaborides have been measured on high-quality single crystals at ambient conditions with high spectral resolution and signal-to-noise ratio. Besides the strong Raman-active modes, numerous Raman-inactive modes occur in the spectra, indicating distortions of the structures. Ab initio calculation of the phonon spectra on ZrB(12) excellently agrees with the experimental results.

Isotopic effects on the phonon modes in boron carbide.

The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes.

On surface Raman scattering and luminescence radiation in boron carbide.

The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.

Raman effect in icosahedral boron-rich solids.

We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects.

Are there bipolarons in icosahedral boron-rich solids?

The charge transport of boron carbide, often incorrectly denoted as B(4)C, has been controversially discussed. It is shown that the bipolaron hypothesis is not compatible with numerous experimental results. In particular, the determined real microstructure of boron carbide and its related electronic properties disprove several assumptions, which are fundamental to the bipolaron hypothesis.