Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe contacts to MoS constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe and MoS was verified.
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