Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques.

AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films.

Preparation of biomass-derived red emission carbon dots for real-time and long-term tracking of cells and tumor growth.

Effective real-time cell tracking and tumor growth monitoring are important for precise diagnosis and therapy of tumors and can also be used to monitor biological processes. In this study, a facile, green microwave method was developed to synthesize biomass-derived red emission carbon dots (RCDs) using the ethanolic extract of holly leaves. Owing to the advantages of the prepared RCDs, such as near infrared emission, stability, strong fluorescence intensity, excellent biocompatibility, penetration of thick tissues, avoiding background fluorescence interference, and improvement of the signal-to-noise ratio of biological imaging, they were applied to cell imaging, real-time cell tracking and tumor growth monitoring.

Optical and Electrical Properties of AlGaN/GaN Epilayers Modulated by Aluminum Content.

AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlGaN (x = 0.

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.

The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE).

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers.

The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10 cm for flat substrate AlN and 0.

Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators.

The semiconductor triboelectric nanogenerator (TENG) based on the tribovoltaic effect has the characteristics of direct current and high current density, but the energy transfer and conversion mechanism is not completely clear. Here, a series of gallium nitride (GaN)-based semiconductor direct-current TENGs (SDC-TENGs) are investigated for clarifying the carrier excitation and transport mechanism. During the friction process, the external output current always flows from GaN to silicon or aluminum, regardless of the direction of the built-in electric field, because of the semiconductor types.

Resonant Raman Scattering in Boron-Implanted GaN.

A small Boron ion (B-ion) dose of 5 × 10 cm was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment.

Surface Plasmon Enhancement of an InGaN Quantum Well Using Nanoparticles Made of Different Metals and Their Combinations.

Surface plasmon (SP) enhancement of photoluminescence (PL) from a green-emitting InGaN/GaN quantum well (QW) using nanoparticles (NPs) made of different metals and their combinations was investigated. The NPs were formed by annealing the metal films in N followed by rapid cooling. Four-fold enhancement in PL intensity was achieved using random metal NPs made of Cu on Mg (Cu-Mg) double metal film that was more than two folds of the enhancement observed by AgNPs.

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD.

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values.

Dielectric and Energy Storage Properties of BaCaZrTiO (BCZT): A Review.

The BaCaZrTiO (BCZT), a lead-free ceramic material, has attracted the scientific community since 2009 due to its large piezoelectric coefficient and resulting high dielectric permittivity. This perovskite material is a characteristic dielectric material for the pulsed power capacitors industry currently, which in turn leads to devices for effective storage and supply of electric energy. After this remarkable achievement in the area of lead-free piezoelectric ceramics, the researchers are exploring both the bulk as well as thin films of this perovskite material.