The Deformation of a Liquid Metal Droplet Under Continuous Acceleration in a Variable Cross-Section Groove.

This paper constructs a numerical simulation model for the deformation of droplets in a variable cross-section groove of a liquid droplet MEMS switch under different directions, amplitudes, frequencies, and waveforms of acceleration. The numerical simulation utilizes the level set method to monitor the deformation surface boundary of the metal droplets. The simulation outcomes manifest that when the negative impact acceleration on the -axis is 12.

Progress in Research on Co-Packaged Optics.

In the 5G era, the demand for high-bandwidth computing, transmission, and storage has led to the development of optoelectronic interconnect technology. This technology has evolved from traditional board-edge optical modules to smaller and more integrated solutions. Co-packaged optics (CPO) has evolved as a solution to meet the growing demand for data.

Residual Stress and Warping Analysis of the Nano-Silver Pressureless Sintering Process in SiC Power Device Packaging.

Chip bonding, an essential process in power semiconductor device packaging, commonly includes welding and nano-silver sintering. Currently, most of the research on chip bonding technology focuses on the thermal stress analysis of tin-lead solder and nano-silver pressure-assisted sintering, whereas research on the thermal stress analysis of the nano-silver pressureless sintering process is more limited. In this study, the pressureless sintering process of nano-silver was studied using finite element software, with nano-silver as an interconnect material.

Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review.

With the advancement of Moore's Law reaching its limits, advanced packaging technologies represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and 3D packaging have received significant attention. While advanced packaging has made breakthroughs in achieving high performance, miniaturization, and low cost, the smaller thermal space and higher power density have created complex physical fields such as electricity, heat, and stress. The packaging interconnects responsible for electrical transmission are prone to serious reliability issues, leading to the device's failure.

Delamination of Plasticized Devices in Dynamic Service Environments.

With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices. In this paper, the delamination failure mechanism of polymer-based packaging devices is clarified by summarizing the relevant literature and the latest research solutions are proposed. The results show that, at the microscopic scale, thermal stress and moisture damage are still the two main mechanisms of two-phase interface failure of encapsulation devices.

Study on Cavitation, Warpage Deformation, and Moisture Diffusion of Sop-8 Devices during Molding Process.

Plastic packaging has shown its advantages over ceramic packaging and metal packaging in lightweight, thin, and high-density electronic devices. In this paper, the reliability and moisture diffusion of Sop-8 (Small Out-Line Package-8) plastic packaging devices are studied, and we put forward a set of complete optimization methods. Firstly, we propose to improve the reliability of plastic packaging devices by reducing the amount of cavitation and warpage deformation.

Temperature Cycle Reliability Analysis of an FBAR Filter-Bonded Ceramic Package.

On the background that the operating frequency of electronic devices tends to the radio frequency (RF) segment, a film bulk acoustic resonator (FBAR) filter is widely used in communication and military fields because of its advantages of high upper frequency, ample power capacity, small size, and low cost. However, the complex and harsh working environment puts higher requirements for packaging FBAR filters. Based on the Anand constitutive equation, the stress-strain response of the bonded ceramic package was studied by the finite element method for the FBAR filter-bonded ceramic package, and the thermal fatigue life of the device was predicted.

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path.

Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module.

In high-integration electronic components, the insulated-gate bipolar transistor (IGBT) power module has a high working temperature, which requires reasonable thermal analysis and a cooling process to improve the reliability of the IGBT module. This paper presents an investigation into the heat dissipation of the integrated microchannel cooling plate in the silicon carbide IGBT power module and reports the impact of the BL series micropump on the efficiency of the cooling plate. The IGBT power module was first simplified as an equivalent-mass block with a mass of 62.

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs.

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device's temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution.

Research of Vertical via Based on Silicon, Ceramic and Glass.

With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore's Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight.

Research on Surface Morphology of Gold Micro Bumps Based on Monte Carlo Method.

In advanced packaging technology, the micro bump has become an important means of chip stacking and wafer interconnection. The reliability of micro bumps, which plays an important role in mechanical support, electrical connection, signal transmission and heat dissipation, determines the quality of chip packaging. Surface morphological defects are one of the main factors affecting the reliability of micro bumps, which are closely related to materials and bonding process parameters.

Three-Dimensional Integrated Fan-Out Wafer-Level Package Micro-Bump Electromigration Study.

To meet the demands for miniaturization and multi-functional and high-performance electronics applications, the semiconductor industry has shifted its packaging approach to multi-chip vertical stacking. Among the advanced packaging technologies for high-density interconnects, the most persistent factor affecting their reliability is the electromigration (EM) problem on the micro-bump. The operating temperature and the operating current density are the main factors affecting the EM phenomenon.

Defect Dipole Behaviors on the Strain Performances of Bismuth Sodium Titanate-Based Lead-Free Piezoceramics.

Bismuth sodium titanate (BNT)-based, lead-free piezoelectric materials have been extensively studied due to their excellent strain characteristics and environmental friendliness. In BNTs, the large strain () usually requires a relatively large electric field () excitation, resulting in a low inverse piezoelectric coefficient d* (/). Moreover, the hysteresis and fatigue of strain in these materials have also been bottlenecks impeding the applications.

The Study of the Reliability of Complex Components during the Electromigration Process.

With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale.

Effect of Surface Roughness on the Electrical Performances of CPW Transmission Lines Used in Future Ultra-High Frequency Applications.

The development of integrated circuits and packaging technology has led to smaller and smaller transmission line sizes and higher and higher operating frequencies up to nearly 100 GHz. However, the skinning depth of transmission lines due to eddy currents becomes smaller and smaller as the operating frequency of coplanar wave guide (CPW) transmission lines becomes higher and higher, while the reduction of device size makes the skinning depth consistent with the surface roughness of the device. In this paper, the concept of modified roughness coefficient was proposed based on the existing correlation factor.

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. The results show that with the increase of trap concentration, the traps capture electrons and reduce the off-state leakage current, which can improve breakdown voltage of the devices. At the same time, as the trap concentration increases, the ionized traps make a high additional electric field near the drain edge, leading to the decrease of breakdown voltage.

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs.

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress.

Using Chiplet Encapsulation Technology to Achieve Processing-in-Memory Functions.

With the rapid development of 5G, artificial intelligence (AI), and high-performance computing (HPC), there is a huge increase in the data exchanged between the processor and memory. However, the "storage wall" caused by the von Neumann architecture severely limits the computational performance of the system. To efficiently process such large amounts of data and break up the "storage wall", it is necessary to develop processing-in-memory (PIM) technology.

Height Uniformity Simulation and Experimental Study of Electroplating Gold Bump for 2.5D/3D Integrated Packaging.

With the rapid development of nano/micro technology for commercial electronics, the typical interconnection method could not satisfy the high power-density packaging requirement. The 2.5D/3D integrated packaging was seen as a promising technology for nano/micro systems.

Visualization and Heat Transfer Performance of Mini-Grooved Flat Heat Pipe Filled with Different Working Fluids.

Mini-grooved flat heat pipe (MGFHP) possesses the advantages of high compactness, no mechanical component, super thermal conductivity, and excellent temperature uniformity, which can meet the demand for electronic devices efficiently cooling. In this research, visual and heat transfer experiments were performed to investigate the flow and thermal characteristics inside the MGFHP. Fluid flow and distribution are observed to be quite different in the MGFHP containing different working fluids, which is affected by the physical properties of working fluid, the surface state of the grooved wick, and limited working space.

A Method for Broadband Polyimide Permittivity Measurement of Silicon Interposer Applied for High Speed Digital Microsystem.

High-speed digital microsystems has emerged as one of the most important solutions for improving system performance, bandwidth, and power consumption. Based on mature micro-system processing technology, a material extraction approach for silicon interposer applied for high-speed digital microsystems was presented in order to obtain frequency-dependent precise material parameters. By combining microwave theory and mathematical model of iterative algorithm, the dielectric constant (Dk) and the dissipation factor (Df) of polyimide dielectric layer is acquired, which minimizes testing costs and streamlines testing process.

Molecular Dynamics Analysis of Graphene Nanoelectromechanical Resonators Based on Vacancy Defects.

Due to the limitation of graphene processing technology, the prepared graphene inevitably contains various defects. The defects will have a particular influence on the macroscopic characteristics of the graphene. In this paper, the defect-based graphene nanoresonators are studied.