Laser-Induced Crystallization of Copper Oxide Thin Films: A Comparison between Gaussian and Chevron Beam Profiles.

The use of a laser with a Gaussian-beam profile is frequently adopted in attempts of crystallizing nonsingle-crystal thin films; however, it merely results in the formation of polycrystal thin films. In this paper, selective area crystallization of nonsingle-crystal copper(II) oxide (CuO) is described. The crystallization is induced by laser, laser-induced crystallization, with a beam profile in the shape of a chevron.

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline InO (InO:H).

Hydrogenated polycrystalline InO (InO:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility () exceeding 100 cm V s are promising candidates for future electronics applications. In this study, we investigated the effects of the SPC temperature of Ar + O + H-sputtered InO:H films on the electron transport properties of InO:H TFTs. The InO:H TFT with an SPC temperature of 300 °C exhibited the best performance, having the largest of 139.

High-mobility hydrogenated polycrystalline InO (InO:H) thin-film transistors.

Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cmVs). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline InO (InO:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process.