Internal moisture barrier layer for improving high-humidity reliability of miniature light emitting diode die without encapsulation.

Atomic layer deposited AlO films are incorporated into miniature light emitting diodes (mini-LEDs) as an internal moisture barrier layer. The experimental results show that the water vapor transmission rate reaches ≤10g/m/day when the AlO thickness is ≥40 nm. The mini-LED with a 40 nm-thick AlO layer shows negligible degradation after 1000 h of 85°C/85% relative humidity testing, whereas the device without an AlO layer fails after only 500 h due to delamination occurring at the GaN surface.

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures.

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied.

Crystallinity Effect on Electrical Properties of PEALD-HfO Thin Films Prepared by Different Substrate Temperatures.

Hafnium oxide (HfO) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy.

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnO Films at Different Substrate Temperatures.

The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C.

Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range.

Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10 Ω·cm for the as-deposited film to the lowest value of 6.

Compact GaO Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature.

Amorphous Gallium oxide (GaO) thin films were grown by plasma-enhanced atomic layer deposition using O plasma as reactant and trimethylgallium as a gallium source. The growth rate of the GaO films was about 0.6 Å/cycle and was acquired at a temperature ranging from 80 to 250 °C.

Tantalum-Doped TiO Prepared by Atomic Layer Deposition and Its Application in Perovskite Solar Cells.

Tantalum (Ta)-doped titanium oxide (TiO) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors.

Deposition and Characterization of RP-ALD SiO Thin Films with Different Oxygen Plasma Powers.

In this study, silicon oxide (SiO) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO films. Post-annealing was performed in the air at different temperatures for 1 h.

Properties and Mechanism of PEALD-InO Thin Films Prepared by Different Precursor Reaction Energy.

Indium oxide (InO) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of InO film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, InO film was prepared by ALD using a remote O plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth.

Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions.

Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystallinity and film properties. The results show that the film thickness increases with annealing temperature owing to the increment of oxide layer caused by the suppression of oxygen vacancy defects as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra.

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells.

In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO films. The experimental results show that the sALD TiO has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance.

Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process.

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films.

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing.

In this study, aluminum oxide (AlO) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O), forming gas (FG), or two-step annealing. Minority carrier lifetime of the samples was measured by Sinton WCT-120. Field-effect passivation and chemical passivation were evaluated by fixed oxide charge (Q) and interface defect density (D), respectively, using capacitance-voltage measurement.

Temperature-Dependent HfO/Si Interface Structural Evolution and its Mechanism.

In this work, hafnium oxide (HfO) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO films and HfO/Si interfaces is investigated. The crystallization of the HfO films and HfO/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.

Surface Passivation of Silicon Using HfO Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Hafnium oxide (HfO) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system.