The growth of porous ZnO nanowires by thermal oxidation of ZnS nanowires.

The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs.

[Spectra and influences of Rayleigh and stimulated Brillouin scattering in fiber-optic distributed disturbance sensor].

Spectra and influences of Rayleigh backscattering (RB) and stimulated Brillouin scattering (SBS) in the fiber-optic distributed disturbance sensor (FDDS) were investigated. Models of RB, double RB (DRB) and SBS in long fibers were established. By numerical simulation, it was found that optical signal-to-noise ratio is extraordinarily reduced due to SBS and RB, which results in location errors.

Ag-catalyzed growth of Ge nanostructures via the thermal evaporation of Ge powder.

The Ag-catalyzed growth of straight Ge nanowires (GeNWs), serrated Ge nanobelts (GeNBs), and hexagonal Ge nanotowers (GeNTs) by thermal evaporation of Ge powder at 950 degrees C in Ar was studied. The growth of GeNWs and GeNBs at 550-600 degrees C followed the top-growth mode via the vapor-solid-solid process, while that of GeNTs at 700-750 degrees C followed the bottom-growth mode via the vapor-liquid-solid process. This result shows that the growth mode of Ge nanostructures catalyzed by Ag nanoparticles is temperature-dependent.

Room temperature oxidation of Cu(3)Ge films grown on Si and Si(1-x)Ge(x) substrates.

Room temperature oxidation of Cu3Ge films grown on Si, Si(0.85)Ge(0.15) and Si(0.