Publications by authors named "Wen-Shiang Liao"
Nanoscale Res Lett
August 2012
Article Synopsis
- A new 3D fin-shaped field-effect transistor (FinFET) structure has been created using gallium arsenide (GaAs) for improved performance in high-mobility channels.
- The design features a thin channel with a specific thickness-to-width ratio and a nano-stacked high-k Al2O3 dielectric layer to reduce gate leakage.
- This innovative III-V MOSFET showcases excellent gate control and performance metrics such as a high Ion/Ioff ratio over 105 and a low subthreshold swing, outperforming traditional MOSFET designs.
