Electric Control of Exchange Bias Effect in FePS-FeGeTe van der Waals Heterostructures.

Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS-FeGeTe.

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet FeGeTe.

Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet FeGeTe (F5GT) into 5.

Theoretical study of tunable magnetism of two-dimensional MnSethrough strain, charge, and defect.

Two-dimensional transition metal dichalcogenide MnSe(2D-MnSe) with Curie temperature approximate to 300 K has a significant spintronic application on thin-film devices. We demonstrate theoretically a tunable magnetic transition of 2D-MnSebetween anti-ferromagnetic (AFM) metal and ferromagnetic (FM) half metal as strain increasing. Mechanism of that transition involves a competition between--through-bond and-direct interaction in 2D-MnSe.

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe_{3}GeTe_{2} Nanoflakes.

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe_{3}GeTe_{2} (FGT) can be largely modulated by a protonic gate. With the increase of the protons intercalated among vdW layers, interlayer magnetic coupling increases.