Skin-like low-noise elastomeric organic photodiodes.

Stretchable optoelectronics made of elastomeric semiconductors could enable the integration of intelligent systems with soft materials, such as those of the biological world. Organic semiconductors and photodiodes have been engineered to be elastomeric; however, for photodetector applications, it remains a challenge to identify an elastomeric bulk heterojunction (e-BHJ) photoactive layer that combines a low Young’s modulus and a high strain at break that yields organic photodiodes with low electronic noise values and high photodetector performance. Here, a blend of an elastomer, a donor-like polymer, and an acceptor-like molecule yields a skin-like e-BHJ with a Young’s modulus of a few megapascals, comparable to values of human tissues, and a high strain at break of 189%.

Large-area low-noise flexible organic photodiodes for detecting faint visible light.

Silicon photodiodes are the foundation of light-detection technology; yet their rigid structure and limited area scaling at low cost hamper their use in several emerging applications. A detailed methodology for the characterization of organic photodiodes based on polymeric bulk heterojunctions reveals the influence that charge-collecting electrodes have on the electronic noise at low frequency. The performance of optimized organic photodiodes is found to rival that of low-noise silicon photodiodes in all metrics within the visible spectral range, except response time, which is still video-rate compatible.

Solution-based electrical doping of semiconducting polymer films over a limited depth.

Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10-20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air.