Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.

In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility () and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS).

Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes.

We proposed a "Ni sacrifice" method to fabricate Al-based highly reflective p-electrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The "Ni sacrifice" p-electrode could have a high optical reflectivity of around 90% at the DUV spectral region below 300 nm. Compared to Ni/Au, indium tin oxide (ITO), and Pd p-contacts, the "Ni sacrifice" led to a higher resistivity of p-contacts and a slightly higher operated voltage of the DUV-LEDs (within 0.

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination.

In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of states (DOSs) are depicted by exponential band tails and Gaussian deep states within the band gap of a-IGZO. Meanwhile, the surface potential solution is developed with the stretched exponential distribution relationship between the created defects and PBS time, and the Boltzmann distribution relationship between the generated traps and incident photon energy, respectively.

Enhanced light output from deep ultraviolet light-emitting diodes enabled by high-order modes on a photonic crystal surface.

The authors demonstrate the enhanced light output from 275-nm AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) structures via the in-plane modulation of shallow photonic crystal (PC) patterns that were fabricated on the p-AlGaN contact layer surface. The employed PC lattice constants are in the range of 270-780 nm, much larger than the fundamental Bragg order lattice constant (∼95 nm). As compared to the unpatterned sample, the intensity of the top (or bottom) emission can be enhanced by up to 331% (or 246%), attributed to the high-order coherent diffraction of the internal trapped light and also the Purcell enhancement of spontaneous emission.

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation.

In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the experimental characteristics, the numerical simulation results reveal that the interface trap states, bulk tail states, and deep-level sub-gap defect states originating from oxygen-vacancy- (V) related defects can be suppressed by an appropriate amount of N dopant. Correspondingly, the electrical properties and reliability of the a-IGZO TFTs are dramatically enhanced.

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors.

In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications.

Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices.

Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efficiency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activation annealing process still limit the use of this technology for GaN-based devices. In this work, we demonstrate successful p-type doping of GaN using protective coatings during a Mg ion implantation and thermal activation process.

Vertically Emitting Indium Phosphide Nanowire Lasers.

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation.

Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays.

Engineering metamaterials with tunable resonances are of great importance for improving the functionality and flexibility of terahertz (THz) systems. An ongoing challenge in THz science and technology is to create large-area active metamaterials as building blocks to enable efficient and precise control of THz signals. Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated.

Strong and Conductive Dry Carbon Nanotube Films by Microcombing.

In order to maximize the carbon nanotube (CNT) buckypaper properties, it is critical to improve their alignment and reduce their waviness. In this paper, a novel approach, microcombing, is reported to fabricate aligned CNT films with a uniform structure. High level of nanotube alignment and straightness was achieved using sharp surgical blades with microsized features at the blade edges to comb single layer of CNT sheet.

Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas.

The enhancement of photo-response in nanometer-scale germanium photodetectors through bull's eye antennas capable of supporting 2nd-order Bloch surface plasmon modes is demonstrated in theory and experiment. A detailed numerical investigation reveals that the presence of surface wave and its constructive interference with the directly incident light are incorporated into the main mechanisms for enhancing transmission through the central nanoaperture. With a grating period of 1500 nm, the area-normalized responsivity can be enhanced up to 3.

In-situ atomic-scale observation of irradiation-induced void formation.

The formation of voids in an irradiated material significantly degrades its physical and mechanical properties. Void nucleation and growth involve discrete atomic-scale processes that, unfortunately, are not yet well understood due to the lack of direct experimental examination. Here we report an in-situ atomic-scale observation of the nucleation and growth of voids in hexagonal close-packed magnesium under electron irradiation.

Continuous measurement of peak hydrogen fluoride exposures in aluminum smelter potrooms: instrument development and in-plant evaluation.

The aluminum smelting process continuously evolves both sulfur dioxide (SO2) and hydrogen fluoride (HF) gases. The vast majority of these evolved gases are captured by local exhaust ventilation systems and transported to fume treatment centers. Any gas escaping the ventilation systems could create the potential for workplace exposures.

Analysis of conformational polymorphism in pharmaceutical solids using solid-state NMR and electronic structure calculations.

A detailed analysis of molecular structure in three polymorphic forms of 5-methyl-2-[(2-nitrophenyl)amino]-3-thiophenecarbonitrile is made using a combination of multidimensional solid-state NMR (SSNMR) experiments and molecular modeling via electronic structure calculations. These compounds, collectively referred to as ROY because of their red, orange, and yellow colors, share a similar molecular structure with the exception of the dihedral angle between the phenyl and thiophene rings. The ROY materials make it possible to study the influence of nearly a single degree of freedom on the associated NMR spectra.