Determination of free electron density in sequentially doped InxGa1-xAs by Raman spectroscopy.

The advent and exponential growth of mobile computing has spurred greater emphasis on the adoption of III-V compound semiconductors in device architectures. The introduction of high charge carrier densities within InxGa1-xAs and the development of metrologies to quantitate the extent of doping have thus emerged as an urgent imperative. As an amphoteric dopant, Si begins to occupy anionic sites at high concentrations, thereby limiting the maximum carrier density that can be obtained upon Si doping of III-V semiconductors.

Raman spectroscopy studies of dopant activation and free electron density of In(0.53)Ga(0.47)As via sulfur monolayer doping.

We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method.