High-performance monolayer MoSnanosheet GAA transistor.

In this article, a 0.7 nm thick monolayer MoSnanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410Amwith a large on/off ratio of 6 × 10at drain voltage = 1 V.