Therapeutic strategies for retention of cranioplasty titanium mesh after mesh exposure.

Background: Titanium mesh exposure after cranioplasty is a possible complication and is usually managed by mesh removal and flap transfer, but the advantages of the rigid prosthesis are then lost. This study aimed to present our experience with negative pressure wound therapy combined with soft tissue dilation for retaining the titanium mesh in patients with mesh exposure after cranioplasty.

Methods: This retrospective study included patients treated between 01/2016 and 05/2019 at the Jiangyin Hospital Affiliated to Southeast University School of Medicine.

LRTM effect and electronic crystal imaging on silicon surface.

Some interesting phenomena have been observed in the laser reflecting Talbot magnification (LRTM) effect discovered at first, in which the high-order nonlinear imaging and the plasmonic structures imaging occur. The LRTM effect images were obtained on the 1D and 2D photonic crystals fabricated by using nanosecond pulsed laser etching on silicon surface, where the high-order nonlinear imaging on the 1D and 2D photonic crystals was observed interestingly. The theory result is consistent with the experimental one, which exhibits that the suitable wave-front shape of injection beam selected in optical route can effectively enlarge the magnification rate and elevate the resolution of the Talbot image.

[Advances in the Action Mechanism of Classical Pathways IKKα and IKKβ in Hematological Tumors and Drug Therapy Blocking Their Effect--Review].

In recent years, it is found that the classical IKKα and IKKβ pathway were closely relates with hematological tumors, except the classical pathogenesis, moreover the classical IKKβ pathway is deeply studied. The studies indicated that the IKKβis activated to phosphorylate the NF-κB through multiple cascades under the effect of extracellular IL-6, TNF-α and other stimulating factors. At the cellular level, the classical IKKβcan promote the tumor cell survival and proliferation, reduce the cell apoptosis, and promote the angiogenesis and cell transfer.

[Research Progress on Immune Mechanism of Immune Thrombocytopenia--Review].

Abstract　　Immune thrombocytopenia (ITP) is an acquired autoimmune hemorrhagic disease, although the ITP pathogenesis is completely unknown, but in terms of the current view, the immune tolerance is main reason for the onset of ITP. In recent years, more and more immune cell subsets, cytokines and the new approacher were found to be closely related with the ITP, such as saliva acid, B cell activating factor, dysfunction of regulatory B cells and Th1/Th2 balance drift, CD4 CD25 T cell function defect, IL-23/Th17 pathway regulation, etc., In this paper, the latest research progress on the immune pathogenesis of ITP are reviewed, so as to provide theoretical basis and research direction for further understanding the pathogenesis of ITP.

Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.

Curved surface effect and manipulation of electronic states in nanosilicon.

It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface.

Localized states and quantum effect of photo-generated carriers in photovoltaic system.

We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system.

Electronic States of Nanocrystal Doped with Oxygen and Visible Emission on Black Silicon Prepared by ns-Laser.

We fabricated the black silicon (BS) structures by using nanosecond pulsed laser (ns-laser) in vacuum or in oxygen environment. It is interesting that the enhanced visible emission occurs in the photoluminescence (PL) spectra measured at room temperature and at lower temperature on the BS surface after annealing, in which lasing near 600 nm is observed on the BS surface with Purcell cavity structure. It is demonstrated in the PL spectra analysis that the electronic states in the nanocrystal doped with oxygen play a main role in the visible emission on the BS surface.

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer.

It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated.

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure.

In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.

[Clincial effect of 3D printing-assisted minimal invasive surgery through a small incision lateral to the rectus abdominis for pelvic fracture].

Objective: To evaluate the clinical effect of 3D printing-assisted minimal invasive surgery on pelvic fracture by plate internal fixation through a small incision lateral to the rectus abdominis.

Methods: This retrospective study was conducted among 50 patients with pelvic fracture undergoing anteromedial plate internal fixation between September, 2013 and June, 2015. Thin-layer computed tomography scan data of the patients were input into Mimics software in DICOM format for 3D editing and virtual surgery before the operation.

Silicon nanocrystal growth under irradiation of electron beam.

In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

Magic electron affection in preparation process of silicon nanocrystal.

It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocrystals almost occur in sphere shape on smaller nanocrystals with less irradiation time of electron beam. In the process, it was investigated that condensed structures of silicon nanocrystals are changed with different impurity atoms in silicon film, in which localized states emission was observed.

[Influence of the depth of retained denatured dermis on the survival rate of grafted skin in burn swine with deep partial-thickness burn].

Objective: To explore the influence of the thickness of retained denatured dermis on the survival rate of grafted skin in swine with deep partial-thickness burn.

Methods: Four deep partial-thickness wounds were reproduced respectively on both sides of spine in 7 Chinese domestic pigs. The wounds of 6 pigs were divided into 0.

Thymosin beta4 and AcSDKP inhibit the proliferation of HL-60 cells and induce their differentiation and apoptosis.

Our previous works have shown that bone marrow stromal cells secrete thymosin beta4 (Tbeta4) and AcSDKP. Tbeta4 and AcSDKP are existed in the conditioned medium of bone marrow endothelial cells. They exerted inhibitory effects on hematopoietic cells and then had protective effect on the early hematopoietic cells, which were cultured in the presence of hematopoietic stimulators.

Intracellular localisation of human HIF-1 alpha hydroxylases: implications for oxygen sensing.

Hypoxia-inducible factor1 (HIF-1) is an essential transcription factor for cellular adaptation to decreased oxygen availability. In normoxia the oxygen-sensitive alpha-subunit of HIF-1 is hydroxylated on Pro564 and Pro402 and thus targeted for proteasomal degradation. Three human oxygen-dependent HIF-1 alpha prolyl hydroxylases (PHD1, PHD2, and PHD3) function as oxygen sensors in vivo.

Expression of Thymosin beta4 in Murine Bone Marrow Endothelial Cells, HL-60 Cells and Human Peripheral Blood Mononuclear Cells.

To investigate the relationship between the growth situation of the cells and the expression level of thymosin beta4, the specific primer of thymosin beta4 was selected to test the expression of thymosin-beta gene in murine bone marrow endothelial cells in different proliferation states and in HL-60 cells and peripheral blood mononuclear cells by RT-PCR. The results showed that the expression level of thymosin beta4 in the murine bone marrow endothelial cells with active proliferation was high, otherwise it was low. The thymosin beta4 gene expression level was higher in HL-60 cells than that in human peripheral blood mononuclear cells.