ToF-SIMS imaging of the nanoscale phase separation in polymeric light emitting diodes: effect of nanostructure on device efficiency.

The nanostructure of the light emissive layer (EL) of polymer light emitting diodes (PLEDs) was investigated using force modulation microscopy (FMM) and scanning time-of-flight secondary ion mass spectrometry (ToF-SIMS) excited with focused Bi(3)(2+) primary beam. Three-dimensional nanostructures were reconstructed from high resolution ToF-SIMS images acquired with different C(60)(+) sputtering times. The observed nanostructure is related to the efficiency of the PLED.

Extraordinarily high efficiency improvement for OLEDs with high surface-charge polymeric nanodots.

The efficiency of highly efficient blue, green, red, and white organic light-emitting diodes (OLEDs) has been substantially advanced through the use of high surface-charge nanodots embedded in a nonemissive layer. For example, the blue OLED's markedly high initial power efficiency of 18.0 lm W(-1) at 100 cd m(-2) was doubled to 35.

Effect of fabrication parameters on three-dimensional nanostructures and device efficiency of polymer light-emitting diodes.

By using 10 kV C(60)(+) and 200 V Ar(+) ion co-sputtering, a crater was created on the light-emitting layer of phosphorescent polymer light-emitting diodes, which consisted of a poly(9-vinyl carbazole) (PVK) host doped with a 24 wt % iridium(III)bis[(4,6-difluorophenyl)pyridinato-N,C(2)] (FIrpic) guest. A force modulation microscope (FMM) was used to analyze the nanostructure at the flat slope near the edge of the crater. The three-dimensional distribution of PVK and FIrpic was determined based on the difference in their mechanical properties from FMM.

Effect of fabrication parameters on three-dimensional nanostructures of bulk heterojunctions imaged by high-resolution scanning ToF-SIMS.

Solution processable fullerene and copolymer bulk heterojunctions are widely used as the active layers of solar cells. In this work, scanning time-of-flight secondary ion mass spectrometry (ToF-SIMS) is used to examine the distribution of [6,6]phenyl-C61-butyric acid methyl ester (PCBM) and regio-regular poly(3-hexylthiophene) (rrP3HT) that forms the bulk heterojunction. The planar phase separation of P3HT:PCBM is observed by ToF-SIMS imaging.

Depth profiling of organic films with X-ray photoelectron spectroscopy using C60+ and Ar+ co-sputtering.

By sputtering organic films with 10 kV, 10 nA C60+ and 0.2 kV, 300 nA Ar+ ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are profiled. The chemical composition and the structure of each layer are preserved and clearly observable.

X-ray photoelectron spectrometry depth profiling of organic thin films using C60 sputtering.

A buckminsterfullerene (C(60)) ion beam was used for X-ray photoelectron spectrometry depth profiling of various organic thin films. Specimens representing different interfaces in organic light-emitting diode devices, including hole-conducting poly(ethylenedioxythiophene), poly(styrenesulfonic acid) (PEDOT:PSS) thin films on ITO with and without polysilicic acid doping, light-emitting Ir-containing 4,4'-bis(carbazol-9-yl)biphenyl (CBP) molecules on PEDOT:PSS, and electron-conducting 2,2',2' '(1,3,5-benzinetriyl)tris(1-phenyl-1-H-benzimidazole) (TPBi) molecules on CBP, were studied. In all cases, a clear multilayer structure was observed.