Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors.

We report an electron-initiated 1064 nm InGaAsP avalanche photodetectors (APDs) with an InAlAs multiplier. By utilizing a tailored digital alloy superlattice grading structure, a charge layer and a p type InAlAs multiplier, an unity gain quantum efficiency of 48%, a low room temperature dark current of 470 pA at 90% breakdown voltage, and a low multiplication noise with an effective k ratio of ∼0.2 are achieved.

Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors.

Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet and inductively coupled plasma (ICP) etching with different mesa shapes as well as etchants. It was found that the mesa geometry had no evident impact on APDs' characteristics regardless of the etching techniques applied. Besides, ICP-etched APDs showed faster punch-through, suppressed premature surface breakdown and lower dark current behaviors compared to the wet-etched devices.