Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field.

Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by carefully identifying the different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures.

Picosecond electric field pulse induced coherent magnetic switching in MgO/FePt/Pt(001)-based tunnel junctions: a multiscale study.

Combined methods of first-principles calculations and Landau-Lifshitz-Gilbert (LLG) macrospin simulations are performed to investigate the coherent magnetization switching in the MgO/FePt/Pt(001)-based magnetic tunnel junctions triggered by short pulses of electric field through the control of magnetic anisotropy energy (MAE) electrically. First-principles calculations indicate that the MAE of MgO/FePt/Pt(001) film varies linearly with the change of the electric field, whereas the LLG simulations show that the change in MAE by electric field pulses could induce the in-plane magnetization reversal of the free layer by tuning the pulse parameters. We find that there exist a critical pulse width τmin to switch the in-plane magnetization, and this τmin deceases with the increasing pulse amplitude E0.

First-principles studies of the magnetic anisotropy of the Cu/FePt/MgO system.

Using first-principles density-functional theory calculations, we systematically investigate the magnetic anisotropy of the multilayer system Cu/(FePt)n/MgO, a promising spintronics structure. Particularly, we have studied the influence of the epitaxial strain, thickness of the ferromagnetic layer, and different interfaces on the magnetic anisotropy energy (MAE) of the system. It is found that the thickness of FePt has slight influence on the MAE, while the increase of the in-plane lattice constant a, or tensile strain, can significantly reduce and even change the sign of the MAE.