Liquid bidentate ligand for full ligand coverage towards efficient near-infrared perovskite quantum dot LEDs.

Perovskite quantum dots (PQDs) show promise in light-emitting diodes (LEDs). However, near-infrared (NIR) LEDs employing PQDs exhibit inferior external quantum efficiency related to the PQD emitting in the visible range. One fundamental issue arises from the PQDs dynamic surface: the ligand loss and ions migration to the interfacial sites serve as quenching centers, resulting in trap-assisted recombination and carrier loss.

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes.

Near-infrared light-emitting diodes (NIR LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiency (EQE) of ~15 %. However, these high-performance NIR-QLEDs suffer from immediate carrier quenching because of the accumulation of migratable ions at the surface of the QDs. These uncoordinated ions and carriers-if not bound to the nanocrystal surface-serve as centers for exciton quenching and device degradation.

Polarity-Mediated Antisolvent Control Enables Efficient Lanthanide-Based near-Infrared Perovskite LEDs.

Alloying lanthanide ions (Yb) into perovskite quantum dots (Yb:CsPb(ClBr)) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb emission at 990 nm. However, high Yb alloying (>15%) results in vacancy-induced inferior material stability.

Thickness-variation-insensitive near-infrared quantum dot LEDs.

In terms of tunable luminescence and high quantum efficiency, colloidal quantum dots (CQDs) are promising semiconductors for constructing near-infrared light-emitting diodes (NIR-LEDs). However, currently available NIR-LEDs are susceptible to variations in the emission layer thickness (EMLT), the highest external quantum efficiency (EQE) decreases to below 50% (relative to peak EQE) when the EMLT varies out of a narrow range of (±30 nm). This is due to the thickness-dependent carrier recombination rate and current density variation, resulting in batch-to-batch EQE fluctuations that limit LED reproducibility.

Iodotrimethylsilane as a Reactive Ligand for Surface Etching and Passivation of Perovskite Nanocrystals toward Efficient Pure-red to Deep-red LEDs.

Resurfacing perovskite nanocrystals (NCs) with tight-binding and conductive ligands to resolve the dynamic ligands-surface interaction is the fundamental issue for their applications in perovskite light-emitting diodes (PeLEDs). Although various types of surface ligands have been proposed, these ligands either exhibit weak Lewis acid/base interactions or need high polar solvents for dissolution and passivation, resulting in a compromise in the efficiency and stability of PeLEDs. Herein, we report a chemically reactive agent (Iodotrimethylsilane, TMIS) to address the trade-off among conductivity, solubility and passivation using all-inorganic CsPbI NCs.

Efficient Near-Infrared Electroluminescence from Lanthanide-Doped Perovskite Quantum Cutters.

Perovskite nanocrystals (PeNCs) deliver size- and composition-tunable luminescence of high efficiency and color purity in the visible range. However, attaining efficient electroluminescence (EL) in the near-infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light-emitting diode (LED) by doping ytterbium ions into a PeNCs host (Yb  : PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb ions by the PeNC host.

Over 800 nm Emission via Harvesting of Triplet Excitons in Exciplex Organic Light-Emitting Diodes.

Triplet excitons can be utilized upon introduction of phosphors into exciplexes, and such a scenario has been studied in the development of high-performance near-infrared (NIR) organic light-emitting diodes (OLEDs). To generate exciplexes in an emitting layer (EML) in the device, commercially available phosphors bis(2-phenylpyridinato-N,C')iridium(acetylacetonate) [Ir(ppy)acac] and iridium(III) bis(4-phenylthieno[3,2-]pyridinato-N,C')acetylacetonate (PO-01) were selected as donor components; in addition, a new designed fluorescent molecule, 3-([1,1':3',1″-terphenyl]-5'-yl)acenaphtho[1,2-]quinoxaline-9,10-dicarbonitrile (AQDC-tPh), and recently reported 3-([1,1':3',1″-terphenyl]-5'-yl)acenaphtho[1,2-]pyrazine-8,9-dicarbonitrile (APDC-tPh) were selected as acceptor components. An OLED with PO-01:AQDC-tPh blends as the EML has realized NIR emission at 750 nm and a maximum external quantum efficiency (EQE) of >0.