Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS.

In this study, we investigated the pathways for integration of perovskite and silicon solar cells through variation of the properties of the interconnecting layer (ICL). The user-friendly computer simulation software wxAMPS was used to conduct the investigation. The simulation started with numerical inspection of the individual single junction sub-cell, and this was followed by performing an electrical and optical evaluation of monolithic 2T tandem PSC/Si, with variation of the thickness and bandgap of the interconnecting layer.

A Comparative Study on p- and n-Type Silicon Heterojunction Solar Cells by AFORS-HET.

Despite the increasing trend of n-type silicon wafer utilization in the manufacturing of high-efficiency heterojunction solar cells due to the superior advantages over p-type counterparts, its high manufacturing cost remains to be one of the most crucial factors, which impedes its market share growth with state-of-the-art silicon heterojunction (SHJ) solar cells demonstrating high conversion efficiencies from various configurations, the prospect of using an n-type wafer is debatable from a cost-efficiency point of view. Hence, a systematic comparison between p- and n-type SHJ solar cells was executed in this work using AFORS-HET numerical software. Front and rear-emitter architectures were selected for each type of wafer with ideal (without defects) and non-ideal (with defects) conditions.