Pseudospin Quantum Hall Ferromagnetism Probed by Electron Spin Resonance.

We study the effect of the pseudospin ferromagnetism with the aid of an electrically detected electron spin resonance in a wide AlAs quantum well containing a high quality two-dimensional electron system. Here, pseudospin emerges as a two-component degree of freedom, that labels degenerate energy minima in momentum space populated by electrons. The built-in mechanical strain in the sample studied imposes a finite "Zeeman" splitting between the pseudospin "up" and "down" states.

Quantum transport in InSb quantum well devices: progress and perspective.

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron effective mass, high electron mobility, large effective-factor, and strong spin-orbit interactions. These unique properties make InSb interesting for both industrial applications and quantum information processing. In this paper, we provide a review of recent progress in quantum transport research on InSb quantum well devices.

Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction.

We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of |η| ≈ 34%, is widely tunable─both in amplitude and sign─as a function of magnetic fluxes and gate voltages.

Occupational inhalation exposure during surface disinfection-exposure assessment based on exposure models compared with measurement data.

Background: For healthcare workers, surface disinfections are daily routine tasks. An assessment of the inhalation exposure to hazardous substances, in this case the disinfectant´s active ingredients, is necessary to ensure workers safety. However, deciding which exposure model is best for exposure assessment remains difficult.

Josephson-like Tunnel Resonance and Large Coulomb Drag in GaAs-Based Electron-Hole Bilayers.

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the millikelvin temperature range. The conductivity between the layers shows a sharp tunnel resonance at a density of 1.