Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Studies of Hole-Selective Molybdenum Oxide Contacts in Silicon Solar Cells.

In this study, substochiometric hole-selective molybdenum oxide (MoO) contacts in crystalline silicon (c-Si) solar cells were investigated by a combination of transmission electron microscopy (TEM) and spatially resolved electron energy-loss spectroscopy (SR-EELS). It was observed that ≈ 4 nm SiO interlayer grows at the MoO/c-Si interface during the evaporation of MoO over a c-Si substrate. SR-EELS analyses revealed the presence of a 1.

Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy.

We report on tin gallium oxide ((SnGa)O) solar-blind metal-semiconductor-metal (MSM) photodetectors grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates with varying tin content up to X=10%. Incorporation of Sn into GaO was found to shift the optical bandgap of the epilayers from 5.0 eV (248 nm) for 0% Sn to 4.

Phase I trial of the androgen receptor modulator CR1447 in breast cancer patients.

CR1447 (4-hydroxytestosterone, 4-OHT) binds to the androgen receptor and has antiproliferative activity in both ER-positive and ER-negative/AR-positive breast cancer cells in preclinical studies. The objective of this first-in man trial was to evaluate the safety and to determine the dose of CR1447, administered as an ointment, for Phase II. Escalating doses (100, 200, 400 mg) of CR1447 were administered topically on a daily basis to patients with ER-positive/AR-positive/HER2-negative advanced breast cancer pretreated with several lines of therapy.

Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells.

In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction.

High-Performance TiO2 -Based Electron-Selective Contacts for Crystalline Silicon Solar Cells.

Thin TiO2 films are demonstrated to be an excellent electron-selective contact for crystalline silicon solar cells. An efficiency of 21.6% is achieved for crystalline silicon solar cells featuring a full-area TiO2 -based electron-selective contact.