Crystal structure of nickel orthovanadate (NiVO) at 299 (3) K and 1323 (8) K: an X-ray diffraction study.

Nickel orthovanadate is a promising material with potential applications in energy storage and photocatalytic devices. The crystal structure of NiVO at 299 (3) K and 1323 (8) K was studied using X-ray powder diffraction. The sample was a single-phase orthorhombic kagome-staircase-Ni(VO)-type structure (space group Cmca) at both temperatures.

Synthesis, dopant solubility, and thermostructural properties of CaTM(VO) (TM = Co, Cu) as function of transition metal content.

Crystals of CaTM(VO) (TM = Co, Cu), belonging to the whitlockite family, were synthesized by solid-state reaction and studied as a function of the TM content () for the first time. The structure was refined at ambient conditions and at high temperatures up to 1200 K using the Rietveld method. The unit cell size significantly decreases with increasing TM content up to the solubility limit, , which is 0.

Electrical and Structural Properties of Semi-Polar-ZnO/-AlO and Polar-ZnO/-AlO Films: A Comparative Study.

In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on -(100) and -(001) oriented AlO substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (T) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the -AlO and highly (101) oriented for the -AlO substrate.

The crystal structure and thermal expansion of novel substitutionally disordered CaTM(VO) (TM = Co, Cu) orthovanadates.

The whitlockite-related materials have attracted researchers' attention because of their potential application in various fields, especially in optoelectronics. In the present work, the structure of novel whitlockite-related oxides CaTM(VO) (TM = Co, Cu) is studied at room and high temperatures, using X-ray powder diffraction. These compounds form by fractional substitution of divalent transition metal atoms into the Ca(VO) lattice.

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T) of 100-300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (-AlO or Si (100)) and a high sensitivity to T, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect.