Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers.

The development of the memristor has generated significant interest due to its non-volatility, simple structure, and low power consumption. Memristors based on graphene offer atomic monolayer thickness, flexibility, and uniformity and have attracted attention as a promising alternative to contemporary field-effect transistor (FET) technology in applications such as logic and memory devices, achieving higher integration density and lower power consumption. The use of graphene as electrodes in memristors could also increase robustness against degradation mechanisms, including oxygen vacancy diffusion to the electrode and unwanted metal ion diffusion.

Two-Step Synthesis of Bismuth-Based Hybrid Halide Perovskite Thin-Films.

Lead halide perovskites have been revolutionary in the last decade in many optoelectronic sectors. Their bismuth-based counterparts have been considered a good alternative thanks to their composition of earth-abundant elements, good chemical stability, and low toxicity. Moreover, their electronic structure is in a quasi-zero-dimensional (0D) configuration, and they have recently been explored for use beyond optoelectronics.

Bright and Efficient Sensitized Near-Infrared Photoluminescence from an Organic Neodymium-Containing Composite Material System.

Intense organic neodymium (Nd) emission is obtained with near-infrared (NIR) emission equivalent in intensity to that of an organic semiconductor emitting material. The advantage of Nd emission is its narrow line width and NIR emission, which is enhanced by ∼3000 times at low excitation power through an efficient sensitization effect from a composite organic sensitizer. This performance is optimized at high concentrations of Nd ions, and the organic perfluorinated system provides the ion excitations with a quantum efficiency of ∼40%.

Manipulation of Molecular Vibrations on Condensing Er State Densities for 1.5 μm Application.

Vibrational modes of chemical bonds in organic erbium (Er) materials play an important role in determining the efficiency of the 1.5 μm Er emission. This work studies the energy coupling of the Er intra-4f transitions and vibrational modes.

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO@ReS Composite Material-Based Diode.

In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS) rich in rhenium (VI) oxide (ReO) surface overlayer (ReO@ReS) and in the indium tin oxide (ITO)/ReO@ReS/aluminum (Al) device configuration is presented. Comprehensive experimental analysis of the ReO@ReS material properties' dependence on the memcapacitor electrical characteristics was carried out by standard as well as frequency-dependent current-voltage, capacitance-voltage, and conductance-voltage studies. Furthermore, determination of the charge carrier conduction model, charge carrier mobility, density of the trap states, density of the available charge carrier, free-carrier concentration, effective density of states in the conduction band, activation energy of the carrier transport, as well as ion hopping was successfully conducted for the ReO@ReS based on the experimental data.