Iono-Magnonic Reservoir Computing With Chaotic Spin Wave Interference Manipulated by Ion-Gating.

Physical reservoirs are a promising approach for realizing high-performance artificial intelligence devices utilizing physical devices. Although nonlinear interfered spin-wave multi-detection exhibits high nonlinearity and the ability to map in high dimensional feature space, it does not have sufficient performance to process time-series data precisely. Herein, development of an iono-magnonic reservoir by combining such interfered spin wave multi-detection and ion-gating involving protonation-induced redox reaction triggered by the application of voltage is reported.

Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism.

Physical reservoir computing is a promising way to develop efficient artificial intelligence using physical devices exhibiting nonlinear dynamics. Although magnetic materials have advantages in miniaturization, the need for a magnetic field and large electric current results in high electric power consumption and a complex device structure. To resolve these issues, we propose a redox-based physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance, which are phenomena described by different nonlinear functions of the magnetization vector that do not need a magnetic field to be applied.

Redox-based ion-gating reservoir consisting of (104) oriented LiCoO film, assisted by physical masking.

Reservoir computing (RC) is a machine learning framework suitable for processing time series data, and is a computationally inexpensive and fast learning model. A physical reservoir is a hardware implementation of RC using a physical system, which is expected to become the social infrastructure of a data society that needs to process vast amounts of information. Ion-gating reservoirs (IGR) are compact and suitable for integration with various physical reservoirs, but the prediction accuracy and operating speed of redox-IGRs using WO as the channel are not sufficient due to irreversible Li trapping in the WO matrix during operation.

Edge-of-chaos learning achieved by ion-electron-coupled dynamics in an ion-gating reservoir.

Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li electrolyte-based ion-gating reservoir (IGR), with ion-electron-coupled dynamics, for use in high-performance physical reservoir computing.

Room-Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device.

An all-solid-state redox device, composed of magnetite (FeO) thin film and Li conducting electrolyte thin film, was fabricated for the manipulation of a magnetization angle at room temperature (RT). This is a key technology for the creation of efficient spintronics devices, but has not yet been achieved at RT by other carrier doping methods. Variations in magnetization angle and magnetic stability were precisely tracked through the use of planar Hall measurements at RT.