Publications by authors named "W M M Kessels"
Article Synopsis
- Atomic Layer Etching (ALE) is crucial for creating complex 3D structures in integrated circuits, and new processes need to be explored to adapt ALE for various materials.
- A novel isotropic plasma ALE process using hexafluoroacetylacetone (Hhfac) combined with H plasma has been developed, achieving precise control of AlO film thickness with a stable etch rate of 0.16 nm per cycle and a high ALE synergy of 98%.
- Advanced techniques like Fourier transform infrared spectroscopy (FTIR) and density functional theory (DFT) simulations reveal that the ALE mechanism involves a balance between etching and surface inhibition reactions, allowing effective thickness control on a nanometer scale with minimal contamination.
In recent years, atomic layer deposition (ALD) has established itself as the state-of-the-art technique for the deposition of SnO buffer layers grown between the fullerene electron transport layer (ETL) and the ITO top electrode in metal halide perovskite-based photovoltaics. The SnO layer shields the underlying layers, i.e.
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- * Researchers used plasma-enhanced ALD to grow large-area MoS and examined how high-κ dielectrics like HfO and AlO impact the electrical properties and doping of these transistors.
- * Findings indicate that factors such as dielectric stoichiometry, carbon impurities, and surface oxidation significantly influence MoS FET performance, with the optimal setup involving thermal ALD AlO to minimize surface damage while enhancing dielectric characteristics.
Atomic layer deposition (ALD) processes are known to deposit submonolayers of material per cycle, primarily attributed to steric hindrance and a limited number of surface sites. However, an often-overlooked factor is the random sequential adsorption (RSA) mechanism, where precursor molecules arrive one-by-one and adsorb at random surface sites. Consequently, the saturation coverage of precursors significantly deviates from ideal closed packing.
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- * Thin films of amorphous MoS demonstrate significant activity improvements after electrochemical activation, with an optimal overpotential range of 210-250 mV, influenced by their initial stoichiometry.
- * The study reveals that while amorphous MoS undergoes structural changes during activation, crystalline MoS remains stable, with lower hydrogen evolution efficiencies observed in crystalline forms (300-520 mV at 10 mA/cm) correlating with defects in the material.