Paramagnetism in Microwave-Synthesized Metal-Free Nitrogen-Doped Graphene Quantum Dots.

Nitrogen-doped graphene quantum dots (NGQDs) have gained significant attention due to their various physical and chemical properties; however, there is a gap in the study of NGQDs' magnetic properties. This work adds to the efforts of bridging the gap by demonstrating the room temperature paramagnetism in GQDs doped with Nitrogen up to 3.26 at.

Design and operation of a hybrid LED/LD-pumped phosphor-converted white-light lamp.

Illumination sources based on phosphors, pumped by laser diodes (LDs), have seen rapid developments over the past decade. Here, we present a new, to the best of our knowledge, design that features both spectral richness and the capability for high brightness. Complete design details and operational characterization have been described.

Ellipsometry Study of CdSe Thin Films Deposited by PLD on ITO Coated Glass Substrates.

Cadmium selenide (CdSe) thin films were deposited on indium tin oxide (ITO) coated glass substrates using pulsed laser deposition (PLD) technique under different growth temperatures. Samples were investigated for their structural, morphological, and optical properties through X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis-NIR spectroscopy. AFM analysis revealed that the surface roughness of the as-grown CdSe thin films increased with the increase in deposition temperature.

Magnetic Control of the Manganese Photoluminescence in FeO/l-Cys ZnS:Mn Nanocomposites.

We investigated the magnetic control of the Mn photoluminescence (PL) in iron oxide/l-cysteine-capped zinc sulfide (FeO/l-cys ZnS:Mn) nanocomposites via temperature- and field-dependent PL intensity studies. FeO/l-cys ZnS:Mn was synthesized following a wet chemical deposition route and then its physicochemical, morphological, and magnetic properties were characterized. X-ray diffraction analysis indicates the formation of a semiconducting composite material with coexisting phases with high crystalline quality and purity.

Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices.

Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO, and G/BNNS/SiO heterostructures were investigated under direct current (DC-bias) conditions at room temperature. Bilayer graphene and BNNS were grown separately and transferred subsequently onto the substrates to fabricate 2D device architectures.