A scalable (<130 nm) resistive switching memristor that features both filamentary and interfacial switching aimed at neuromorphic computing is developed in this study. The typically perceived noise or volatility was effectively harnessed as a controlled mechanism for interfacial switching. The multilayer structure for the proposed memristor enhances switching stability by curbing ionic overmigration and mitigating leakage paths.
View Article and Find Full Text PDFThe human nervous system inspires the next generation of sensory and communication systems for robotics, human-machine interfaces (HMIs), biomedical applications, and artificial intelligence. Neuromorphic approaches address processing challenges; however, the vast number of sensors and their large-scale distribution complicate analog data manipulation. Conventional digital multiplexers are limited by complex circuit architecture and high supply voltage.
View Article and Find Full Text PDFCorrection for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath , , 2024, , 2643-2656, https://doi.org/10.1039/D3MH02055J.
View Article and Find Full Text PDFTwo important factors affecting the progress of coronavirus disease 2019 (COVID-19) caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) are the S-protein binding function of ACE2 receptors and the membrane fluidity of host cells. This study aimed to evaluate the effect of static magnetic field (SMF) on S-protein/ACE2 binding and cellular membrane fluidity of lung cells, and was performed in vitro using a Calu-3 cell model and in vivo using an animal model. The ability of ACE2 receptors to bind to SARS-CoV-2 spike protein on host cell surfaces under SMF stimulation was evaluated using fluorescence images.
View Article and Find Full Text PDFElectric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfOheterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320 °C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated.
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