In-situ observation of lateral AlAs oxidation and dislocation formation in VCSELs.

Understanding how defects are generated and propagate during operation in modern vertical cavity surface emitting lasers (VCSEL) is an important challenge in order to develop the next generation of highly reliable semiconductor lasers. Undesired oxidation processes or performance degrading dislocation networks are typically investigated by conventional failure analysis after damage formation. In this works new approach to VCSEL failure analysis, oxide confined high power VCSELs are investigated in-situ at elevated temperatures in a transmission electron microscope.

A method for a column-by-column EELS quantification of barium lanthanum ferrate.

High-resolution STEM-EELS provides information about the composition of crystalline materials at the atomic scale, though a reliable quantitative chemical analysis is often hampered by zone axis conditions, where neighbouring atomic column intensities contribute to the signal at the probe position. In this work, we present a procedure to determine the concentration of two elements within equivalent atomic columns from EELS elemental maps - in our case barium and lanthanum within the A-sites of BaLaFeO, a second order Ruddlesden-Popper phase. We took advantage of the large changes in the elemental distribution from column to column and introduced a technique, which substitutes inelastic scattering cross sections during the quantification step by using parameters obtained from the actual experiment.

The Performance of EDXS at Elevated Sample Temperatures Using a MEMS-Based In Situ TEM Heating System.

Since the development of MEMS heating holders, dynamic in-situ experiments at elevated temperatures may be complemented by X-ray spectrometry for chemical analysis. Although the amount of IR radiation is small when compared to furnace holders, the influence of IR radiation emitted from the heating device on the quality of the X-ray spectra is significant. In this work, we systematically examine the influence of infrared (IR) radiation generated by MEMS-based in situ heating systems (DENSsolutions single- and double-tilt holders) on the results and interpretation of energy-dispersive X-ray (EDX) spectra through simulation and measurement.

Quantitative EDXS: Influence of geometry on a four detector system.

The influence of the geometry on quantitative energy dispersive X-ray spectrometry (EDXS) analysis is determined for a ChemiSTEM system (Super-X) in combination with a low-background double-tilt specimen holder. For the first time a combination of experimental measurements with simulations is used to determine the positions of the individual detectors of a Super-X system. These positions allow us to calculate the detector's solid angles and estimate the amount of detector shadowing and its influence on quantitative EDXS analysis, including absorption correction using the ζ-factor method.

Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors.

Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier.