Josephson-like Tunnel Resonance and Large Coulomb Drag in GaAs-Based Electron-Hole Bilayers.

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the millikelvin temperature range. The conductivity between the layers shows a sharp tunnel resonance at a density of 1.

Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition.

Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to be defect-free over their whole length, which can be several tens µm. Excellent 1D wires have been produced by cleaving semiconductors (GaAs, AlGaAs) in ultra high vacuum and overgrowing the pristine edge surface by molecular beam epitaxy (MBE).

Erratum: Signatures for Wigner Crystal Formation in the Chemical Potential of a Two-Dimensional Electron System [Phys. Rev. Lett. 113, 076804 (2014)].

This corrects the article DOI: 10.1103/PhysRevLett.113.

Anomalous Interlayer Transport of Quantum Hall Bilayers in the Strongly Josephson-Coupled Regime.

We investigate Josephson coupling in a closely spaced quantum Hall bilayer. Reduction of the interlayer barrier from the widely used values of 10-12 nm to the present one of 8 nm leads to qualitatively different interlayer transport properties. The breakdown of interlayer coherence can be spatially confined in regions that are smaller than the device size.