The anthrax pathogen can remain dormant as spores in soil for many years. This applies to both natural foci and to sites of anthropogenic activity such as tanneries, abattoirs, or wool factories. The A.
View Article and Find Full Text PDFThe anthrax-causing bacterium Bacillus anthracis comprises the genetic clades A, B, and C. In the northernmost part (Pafuri) of Kruger National Park (KNP), South Africa, both the common A and rare B strains clades occur. The B clade strains were reported to be dominant in Pafuri before 1991, while A clade strains occurred towards the central parts of KNP.
View Article and Find Full Text PDFis a rare but highly dangerous zoonotic bacterial pathogen. At the beginning of this century, a new manifestation of the disease, injectional anthrax, emerged as a result of recreational heroin consumption involving contaminated drugs. The organisms associated with this 13-year-lasting outbreak event in European drug consumers were all grouped into the canonical single-nucleotide polymorphism (canSNP) clade A-branch (A.
View Article and Find Full Text PDFEnviron Toxicol Chem
May 2024
Digesta were collected from the intestines of seven species of bottom-feeding fish to better understand the role of incidental ingestion of sediment in exposing fish to inorganic contaminants. A composite sediment tracer variable, based on concentrations of Co, Cr, Ni, Ti, V, and Y in digesta and in sediment, was calculated to estimate sediment content of digesta. Concentration factors (mg/kg in digesta divided by mg/kg in sediment) of eight elements of interest were linearly regressed on this tracer variable.
View Article and Find Full Text PDFIn silicon heterojunction solar cell technology, thin layers of hydrogenated amorphous silicon (a-Si:H) are applied as passivating contacts to the crystalline silicon (c-Si) wafer. Thus, the properties of the a-Si:H is crucial for the performance of the solar cells. One important property of a-Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si─H bond stretching vibrations.
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