Carrier dynamics in highly excited TlInS: evidence of 2D electron-hole charge separation at parallel layers.

We report a comprehensive study of the time-resolved photoluminescence (PL), carrier recombination, and carrier diffusion under diverse laser pulse excitation in TlInS2. The 2D-layered crystals were grown by the Bridgman method without or with the presence of a small amount of erbium in the melt. The investigation exposes large differences in two crystal types, although, a linear nonradiative lifetime and carrier diffusivity attain close values under high excitation with no contribution of the Auger recombination and the absence of the band gap narrowing effect.

Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: the dynamics of properties with deposition time.

It was demonstrated in our previous work that the photoelectrochemical (PEC) reduction processes occur with a giant incident photon-to-current conversion efficiency (IPCE ≫ 100%) at bismuth oxysulfide (BOS) semiconductor films in aqueous solutions containing acceptors of photoelectrons ([Fe(CN)6]3-). The anomalously high IPCE was related to the photoconductivity of the semiconductor. In this work, we analyze the dynamics of the chemical and phase composition of BOS films with variation of their deposition time, as well as the dependence of photocurrent on the film thickness and wavelength of the incident light.