Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure.

Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5-4 μm. A range of compositions of the InAsSb ternary solid solution has been established, where the energy resonance between the band gap and the splitting-off band in the valence band of the semiconductor can be achieved.