Towards pharmacological treatment screening of cardiomyocyte cells using Si nanowire FETs.

Silicon nanowires (Si NWs) are the most promising candidates for recording biological signals due to improved interfacing properties with cells and the possibility of high-speed transduction of biochemical signals into detectable electrical responses. The recording of extracellular action potentials (APs) from cardiac cells is important for fundamental studies of AP propagation features reflecting cell activity and the influence of pharmacological substances on the signal. We applied a novel approach of using fabricated Si NW field-effect transistors (FETs) in combination with fluorescent marker techniques to evaluate the functional activity of cardiac cells.

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes.

We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed.

Noise spectroscopy of tunable nanoconstrictions: molecule-free and molecule-modified.

Devices with metallic nanoconstrictions functionalized by organic molecules are promising candidates for the role of functional devices in molecular electronics. However, at the moment little is known about transport and noise properties of nanoconstriction devices of this kind. In this paper, transport properties of bare gold and molecule-containing tunable cross-section nanoconstrictions are studied using low-frequency noise spectroscopy.

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel.

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment.