Valence EELS below the limit of inelastic delocalization using conical dark field EFTEM or Bessel beams.

In this experimental work we present novel methods to increase the spatial resolution of valence electron energy loss spectrometry (VEELS) investigations below the limit given by the inelastic delocalization. For this purpose we analyse a layer stack consisting of silicon/silicon-oxide/silicon-nitride/silicon-oxide/silicon (SONOS) with varying layer thickness down to the 2nm level. Using a combination of a conical illumination and energy filtered transmission electron microscopy we are able to identify the layers by using low energy losses.