Publications by authors named "Vladimir Neplokh"

Efficient second harmonic generation and broad-band photoluminescence from deeply subwavelength and nontoxic nanoparticles is essential for nanophotonic applications. Here, we explore nonlinear optical response from mesoporous Si/SiO, SiO, and Si nanoparticles, considering various fabrication and treatment procedures. We show that thermal annealing (including femtosecond laser treatment) of mesoporous Si/SiO nanoparticles provides the transformation of Si phase from amorphous to crystalline, enhancing the second harmonic and nonlinear photoluminescent response.

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Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes.

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Nonlinear silicon photonics has a high compatibility with CMOS technology and therefore is particularly attractive for various purposes and applications. Second harmonic generation (SHG) in silicon nanowires (NWs) is widely studied for its high sensitivity to structural changes, low-cost fabrication, and efficient tunability of photonic properties. In this study, we report a fabrication and SHG study of Si nanowire/siloxane flexible membranes.

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Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III-V nanowires (NWs).

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We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm.

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The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone rubbers and the semiconductor materials with original fabrication methods to design LEDs and demonstrate their significant flexibility. We developed electrodes based on a composite GaP nanowire-phenylethyl-functionalized silicone rubber membrane, improved with single-walled carbon nanotube films for a hybrid poly(ethylene oxide)-metal-halide perovskite (CsPbBr) flexible green LED.

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We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation.

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Article Synopsis
  • Inorganic halides perovskite CsPbBr nanoparticles exhibit high light-conversion efficiency and tunability across the visible spectrum, making them valuable for optoelectronic applications.
  • A new method involving the recrystallization of these nanoparticles within electrospun fluoropolymer fibers has been developed, using affordable materials and equipment.
  • The resulting nonwoven mats demonstrated effective down-conversion of UV light and up-conversion of IR radiation, along with strong mechanical stability, highlighting their potential for flexible, commercially viable technologies.
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Article Synopsis
  • - We introduce a new method to improve the electrical and optical properties of single-walled carbon nanotube (SWCNT) films for use as transparent electrodes by creating specific patterns on the films.
  • - Our approach involves both theoretical analysis of how the pattern shape affects film quality and practical experiments to test these designs.
  • - The optimal performance of the patterned SWCNT films is achieved when starting with films that have low light transmission but high electrical conductivity, resulting in better performance than traditional indium-tin-oxide electrodes on various surfaces.
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Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy.

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Engineering of nonlinear optical response in nanostructures is one of the key topics in nanophotonics, as it allows for broad frequency conversion at the nanoscale. Nevertheless, the application of the developed designs is limited by either high cost of their manufacturing or low conversion efficiencies. This paper reports on the efficient second-harmonic generation in a free-standing GaP nanowire array encapsulated in a polymer membrane.

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A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE.

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We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited.

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Article Synopsis
  • - The study focused on creating and analyzing core/shell InGaN/GaN nanowire LEDs, demonstrating that single nanowires and arrays have similar light emission characteristics, indicating good uniformity.
  • - Electroluminescence spectra showed different peaks related to blue and green emissions, with techniques used to enhance blue light while minimizing green light effectively.
  • - By altering contact layouts and applying plasma treatments, researchers found ways to control emitted light color in these LEDs, though some modifications led to reduced blue intensity when removing green emission sources.
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