Energetic, structural and electronic features of Sn-, Ga-, O-based defect complexes in cubic InO.

Defect energy formation, lattice distortions and electronic structure of cubic InO with Sn, Ga and O impurities were theoretically investigated using density functional theory. Different types of point defects, consisting of 1-4 atoms of Sn, Ga and O in both substitutional and interstitial (structural vacancy) positions, were examined. It was demonstrated, that formation of substitutional Ga and Sn defects are spontaneous, while formation of interstitial defects requires an activation energy.