Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films.

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films.

Methyl Methacrylate Copolymer with Pendant Thioxanthenone Groups as Active Layer for Resistive Memory Devices.

An electro-active copolymer of methyl methacrylate and 2-((4-acroylpiperazine-1-yl)methyl)-9H-thioxanthene-9-one (poly(MMA-co-ThS)) was synthesized by radical polymerization. The copolymer has good solubility in most organic solvents, thermal stability up to 282 °C and excellent ability to form thin films on silicon wafers. Poly(MMA-co-ThS) films exhibited an electrochemical and electrochromic activity resulting in the formation of long-lived radical anion states of pendant thioxanthone groups inside the film.

Principles for coding associative memories in a compact neural network.

A major goal in neuroscience is to elucidate the principles by which memories are stored in a neural network. Here, we have systematically studied how four types of associative memories (short- and long-term memories, each as positive and negative associations) are encoded within the compact neural network of worms. Interestingly, sensory neurons were primarily involved in coding short-term, but not long-term, memories, and individual sensory neurons could be assigned to coding either the conditioned stimulus or the experience valence (or both).

Real-time acoustic monitoring with telemetry to mitigate potential effects of seismic survey sounds on marine mammals: a case study offshore Sakhalin Island.

Exxon Neftegas Ltd. (ENL) carried out three 4D seismic surveys during the summer of 2015. Seismic operations in two of these fields (Odoptu and Chayvo) ensonified the nearshore feeding area of Korean-Okhotsk (western) gray whales (Eschrichtius robustus), potentially disturbing feeding activities.

Acoustic monitoring and analyses of air gun, pile driving, vessel, and ambient sounds during the 2015 seismic surveys on the Sakhalin shelf.

During the summer of 2015, four 4D seismic surveys were conducted on the northeastern Sakhalin shelf near the feeding grounds of the Korean-Okhotsk (western) gray whale (Eschrichtius robustus) population. In addition to the seismic surveys, onshore pile driving activities and vessel operations occurred. Forty autonomous underwater acoustic recorders provided data in the 2 Hz to15 kHz frequency band.

Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor.

High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μ), of 41.

Adaptation to Fluconazole via Aneuploidy Enables Cross-Adaptation to Amphotericin B and Flucytosine in Cryptococcus neoformans.

The high morbidity and mortality of cryptococcal meningitis is due to the limited range of therapeutic options: only three classes of antifungal drugs are available (polyenes [amphotericin B], azoles [fluconazole], and pyrimidine analogues [flucytosine]). Fluconazole is the most widely used antifungal drug in sub-Saharan Africa, where cryptococcal meningitis is a major cause of death in patients infected with HIV. In this study, we found that exposure to fluconazole, even for short times (48 h) at subinhibitory concentrations, drove rapid adaptation of Cryptococcus neoformans serotype A strain H99 via the acquisition of different aneuploid chromosomes.

Tunicamycin Potentiates Antifungal Drug Tolerance via Aneuploidy in Candida albicans.

How cells exposed to one stress are later able to better survive other types of stress is not well understood. In eukaryotic organisms, physiological and pathological stresses can disturb endoplasmic reticulum (ER) function, resulting in "ER stress." Here, we found that exposure to tunicamycin, an inducer of ER stress, resulted in the acquisition of a specific aneuploidy, chromosome 2 trisomy (Chr2x3), in Candida albicans.

Improved Device Distribution in High-Performance SiN Resistive Random Access Memory via Arsenic Ion Implantation.

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiN RRAM device is realized via arsenic ion (As) implantation. Besides, the As-implanted SiN RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device.

Charge transport mechanism in the forming-free memristor based on silicon nitride.

Nonstoichiometric silicon nitride SiN is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied.

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.

Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility () and large on-current/off-current (I/I) is challenging.

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer.

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO TFTs, with a high field-effect mobility () of 136 cm/Vs, a large on-current/off-current (I/I) of 1.5 × 10, and steep subthreshold slopes of 108 mV/dec.

Electronic structure and charge transport mechanism in a forming-free SiO -based memristor.

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated.

High Performance All Nonmetal SiN Resistive Random Access Memory with Strong Process Dependence.

All-nonmetal resistive random access memory (RRAM) with a N-Si/SiN/P-Si structure was investigated in this study. The device performance of SiN developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiN RRAM device developed using PVD has a large resistance window that is larger than 10 and exhibits good endurance to 10 cycles under switching pulses of 1 μs and a retention time of 10 s at 85 °C.

All Nonmetal Resistive Random Access Memory.

Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside.

Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide.

The atomic and electronic structure of nonstoichiometric amorphous tantalum oxide (TaO ) films of different composition has been investigated by means of electron microscopy, x-ray photoelectron spectroscopy, Raman and infrared spectroscopy. The dispersion of the absorption coefficient and refraction index has been studied by spectral ellipsometry. The optical spectra were interpreted using the results of a quantum-chemical simulation for crystalline orthorhombic TaO .

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.

Investigation of efficient features for image recognition by neural networks.

In the paper, effective and simple features for image recognition (named LiRA-features) are investigated in the task of handwritten digit recognition. Two neural network classifiers are considered-a modified 3-layer perceptron LiRA and a modular assembly neural network. A method of feature selection is proposed that analyses connection weights formed in the preliminary learning process of a neural network classifier.