Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots.

The effect of an external electric field and dissipative tunneling on the spectral intensity of recombination radiation in a quantum dot with an impurity complex (a hole localized on a neutral acceptor interacting with an electron localized in the ground state of the quantum dot) is studied in the zero-radius potential model in the adiabatic approximation. The probability of dissipative tunneling of a hole is calculated in the one-instanton approximation. A high sensitivity of the recombination radiation intensity to the strength of the external electric field and to such parameters of the surrounding matrix (dissipative tunneling parameters) as temperature, the constant of interaction with the contact medium (or the heat-bath), and the frequency of phonon modes, has been revealed.