Conformal antireflection coatings for optical dome covers by atomic layer deposition.

Complex 3D-shaped optics are difficult to coat with conventional technologies. In this research, large top-open optical glass cubes with a 100 mm side length were functionalized to simulate large dome-shaped optics. Antireflection coatings for the visible range (420-670 nm) and for a single wavelength (550 nm) were applied by atomic layer deposition simultaneously on two and six demonstrators, respectively.

Plasma-Enhanced Atomic Layer Deposition of HfO with Substrate Biasing: Thin Films for High-Reflective Mirrors.

Tuning ion energies in plasma-enhanced atomic layer deposition (PEALD) processes enables fine control over the material properties of functional coatings. The growth, structural, mechanical, and optical properties of HfO thin films are presented in detail toward photonic applications. The influence of the film thickness and bias value on the properties of HfO thin films deposited at 100 °C using tetrakis(dimethylamino)hafnium (TDMAH) and oxygen plasma using substrate biasing is systematically analyzed.

Structural, optical, and mechanical properties of TiO nanolaminates.

The structural, optical, and mechanical properties of TiO nanolaminate films grown by plasma-enhanced atomic layer deposition are discussed. Several TiO/AlO and TiO/SiO compositions have been investigated to study the effect of the relative number of ALD oxide cycles on the film properties to obtain a high refractive index coating with low optical losses, low roughness, and low mechanical stress. The formation of crystalline TiO observed at high deposition temperature, or film thickness was inhibited by periodically introducing ultra-thin amorphous layers into the film.

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study.

The growth, chemical, structural, mechanical, and optical properties of oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) are strongly influenced by the average-bias voltage applied during the reaction step of surface functional groups with oxygen plasma species. Here, this effect is investigated thoroughly for SiO2 deposited in two different PEALD tools at average-bias voltages up to -300 V. Already at a very low average-bias voltage (< -10 V), the SiO2 films have significantly lower water content than films grown without biasing together with the formation of denser films having a higher refractive index and nearly stoichiometric composition.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film.