Graphene Phase Modulators Operating in the Transparency Regime.

Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimizing the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimized.

Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer.

Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g.

Graphene Photonics I/Q Modulator for Advanced Modulation Formats.

Starting from its classical domain of long distance links, optical communication is conquering new application areas down to chip-to-chip interconnections in response to the ever-increasing demand for higher bandwidth. The use of coherent modulation formats, typically employed in long-haul systems, is now debated to be extended to short links to increase the bandwidth density. Next-generation transceivers are targeting high bandwidth, high energy efficiency, compact footprint, and low cost.

Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si.

2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators.

Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far.

Wafer-Scale Integration of Graphene-Based Photonic Devices.

Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm V s) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits.

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction.

Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors.

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.

High-speed double layer graphene electro-absorption modulator on SOI waveguide.

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s.

Geometrical Representation of a Polarisation Management Component on a SOI Platform.

Grating couplers, widely used in Silicon Photonics (SiPho) for fibre-chip coupling are polarisation sensitive components, consequently any polarisation fluctuation from the fibre optical link results in spurious intensity swings. A polarisation management componentis analytically considered, coupled with a geometrical representation based on phasors and Poincaré sphere, generalising and simplifying the treatment and understanding of its functionalities. A specific implementation in SOI is shown both as polarisation compensator and polarisation controller, focusing on the operative principle.

Dual use architecture for innovative lidar and free space optical communications.

An innovative and effective architecture for lidar systems is presented and experimentally demonstrated. The proposed scheme can also be easily exploited for optical communications. In particular, the system includes an innovative lidar software-defined architecture based on optically coherent detection, overcoming current drawbacks of time of flight incoherent systems.

Polarization insensitive silicon photonic ROADM with selectable communication direction for radio access networks.

We report on an experimental prototype of a low-cost silicon photonic reconfigurable optical add/drop multiplexer (ROADM). The device is able to operate with up to 12 wavelength division multiplexing channels. In order to control the polarization of the multi-wavelength signal at the input of the device, an integrated polarization controller is investigated as an alternative to the polarization diversity device architecture.

300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

Design optimization of single and double layer Graphene phase modulators in SOI.

In this paper we report on an electro-refractive modulator based on single or double-layer graphene on top of silicon waveguides. The graphene layers are biased to the transparency condition in order to achieve phase modulation with negligible amplitude modulation. By means of a detailed study of both the electrical and optical properties of graphene and silicon, as well as through optimization of the geometrical parameters, we show that the proposed devices may theoretically outperform existing modulators both in terms of V(π)L and of insertion losses.