This paper presents the results of studies of the nanoporous silicon structure, both with different pore depths (up to 180 μm) and with layers in which a graphene-like coating was synthesized on the inner surface of the pores. The nanoporous layers were characterized by SEM as well as IR and Raman spectroscopy. Cyclic voltammetry and galvanostatic charge-discharge data in 3 M HSO are presented as well as the results of the cyclic stability of these characteristics for the nanoporous structure.
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