Strong Interfacial Exchange Field in a Heavy Metal/Ferromagnetic Insulator System Determined by Spin Hall Magnetoresistance.

Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS).

Theory of Spin Hall Magnetoresistance from a Microscopic Perspective.

We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the interface and the spin-spin correlation functions of the local moments on the surface of the magnetic insulator. The magnetic-field and temperature dependence of the spin mixing conductances leads to a rich behavior of the resistance due to an interplay between the Hanle effect and the spin mixing at the interface.

Magnetic Properties of Metal⁻Organic Coordination Networks Based on 3d Transition Metal Atoms.

The magnetic anisotropy and exchange coupling between spins localized at the positions of 3d transition metal atoms forming two-dimensional metal⁻organic coordination networks (MOCNs) grown on a Au(111) metal surface are studied. In particular, we consider MOCNs made of Ni or Mn metal centers linked by 7,7,8,8-tetracyanoquinodimethane (TCNQ) organic ligands, which form rectangular networks with 1:1 stoichiometry. Based on the analysis of X-ray magnetic circular dichroism (XMCD) data taken at T = 2.

Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev.

Direct measurement of the spin-orbit interaction in a two-electron InAs nanowire quantum dot.

We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime, we propose a method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Because of a large effective g factor |g(*)|=8+/-1, the transition from a singlet S to a triplet T+ ground state with increasing magnetic field is dominated by the Zeeman energy rather than by orbital effects.

Measurement efficiency and n-shot readout of spin qubits.

We consider electron spin qubits in quantum dots and define a measurement efficiency e to characterize reliable measurements via n-shot readouts. We propose various implementations based on a double dot and a quantum point contact (QPC) and show that the associated efficiencies e vary between 50% and 100%, allowing single-shot readout in the latter case. We model the readout microscopically and derive its time dynamics in terms of a generalized master equation, calculate the QPC current, and show that it allows spin readout under realistic conditions.