Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF/O Gas Mixture.

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from -20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters-the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown.