Experimental Investigation of Load-Bearing Capacity in EN AW-2024-T3 Aluminum Alloy Sheets Strengthened by SPIF-Fabricated Stiffening Rib.

The aluminum strength-to-weight ratio has become a highly significant factor in industrial applications. Placing stiffening ribs along the surface can significantly improve the panel's resistance to bending and compression in aluminum alloys. This study used single-point incremental forming (SPIF) to fabricate stiffening ribs for 1 mm and 3 mm thick aluminum alloy EN AW-2024-T3 sheets.

Experimental Research and Numerical Modelling of the Cold Forming Process of the Inconel 625 Alloy Sheets Using Flexible Punch.

The paper presents the numerical and experimental results of research aimed at determining the influence of hardness in the range of 50-90 Shore A of layered tools composed of elastomeric materials on the possibility of forming Inconel 625 nickel-based alloy sheets. A stamping die composed of 90MnCrV8 steel (hardness 60HRC) was designed for forming embosses in drawpieces, ensuring various stress states on the cross-section of the formed element. The principle of operating the stamping die was based on the Guerin method.

Atomically sharp domain walls in an antiferromagnet.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy.

Defect-driven antiferromagnetic domain walls in CuMnAs films.

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects.

Interaction between Thermal Modification Temperature of Spruce Wood and the Cutting and Fracture Parameters.

This work examines the effect of thermal modification temperatures in the production of thermally modified wood on the cutting and fracture parameters when cutting heat-treated spruce wood by a circular sawblade machine. The samples were thermally modified at 160, 180, 200, and 220 °C. One sample was unmodified and was used as a reference sample.

Terahertz electrical writing speed in an antiferromagnetic memory.

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet.

Current polarity-dependent manipulation of antiferromagnetic domains.

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90° rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry .

Magnonic charge pumping via spin-orbit coupling.

The interplay between spin, charge and orbital degrees of freedom has led to the development of spintronic devices such as spin-torque oscillators and spin-transfer torque magnetic random-access memories. In this development, spin pumping represents a convenient way to electrically detect magnetization dynamics. The effect originates from direct conversion of low-energy quantized spin waves in the magnet, known as magnons, into a flow of spins from the precessing magnet to adjacent leads.

Influence of magnetic anisotropy on laser-induced precession of magnetization in ferromagnetic semiconductor (Ga, Mn)As.

The laser-induced precession of magnetization in (Ga, Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga, Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency.

Theoretical Modeling of the Surface-Enhanced Raman Optical Activity.

Surface-enhanced Raman optical activity (SEROA) is a new technique combining the sensitivity of the surface-enhanced Raman scattering (SERS) with the detailed information about molecular structure provided by the chiral spectroscopies. So far, experimental SEROA spectra have been reported in several studies, but the interpretation and theoretical background are rather limited. In this work, general expressions for the electromagnetic contribution to SEROA are derived using the matrix polarization theory and used to investigate the enhancement in model systems.

Spin Hall effect transistor.

The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor.