Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.

This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Sentaurus TCAD simulations in order to determine the optimum fixed negative charge concentration required to achieve the highest BV. The simulated structure consisted of a Schottky diode with a box consisting of negative fixed charges to achieve the edge termination of the Schottky device.