We present the enhanced properties observed in the phase change memory alloy GeSbTe (GST) when doped with arsenic. Although arsenic is known as a toxic element, our observations show that significant improvement can be obtained in GST systems on thermal stability, transition temperature between amorphous and crystalline phases and switching behaviors when doping with arsenic. Though both the GST and arsenic doped GST are amorphous in the as-deposited state, only GST alloy turns to crystalline NaCl-type structure after annealing at 150 °C for 1 h.
View Article and Find Full Text PDFRecently, extensive R&D has been conducted, both by industry and academia, to significantly raise the conversion efficiency of commercial photovoltaic (PV) modules. The installation of PV systems aimed at optimizing solar energy yield is primarily dictated by its geographic location and installation design to maximize solar exposure. However, even when these characteristics have been addressed appropriately, there are other factors that adversely affect the performance of PV systems, namely the temperature-induced voltage decrease leading to a PV power loss, and the dust accumulation (soiling).
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