Synthesis of multiphase MoS heterostructures using temperature-controlled plasma-sulfurization for photodetector applications.

Two-dimensional (2D) materials exhibit outstanding performance in photodetectors because of their excellent optical and electronic properties. Specifically, 2D-MoS, a transition metal dichalcogenide, is a prominent candidate for flexible and portable photodetectors based on its inherent phase-dependent tunable optical band gap properties. This research focused on creating high-performance photodetectors by carefully arranging out-of-plane 2D heterostructures.

Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors.

The conventional synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is low yielding and lack the heterojunction interface quality. The chemical vapor deposition (CVD) techniques have achieved high-quality heterostructure interfaces but require a high synthesis temperature (>600 °C) and have a low yield of heterostructures. Therefore, the large scale and high interface quality of TMDC heterojunctions using low-temperature synthesis methods are in demand.