Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds.

We demonstrate the potential of using digital stereo micro-photogrammetry for the analysis and modeling of the habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds. A prototype scanning system with a resolution of 5 μm has been implemented based on a digital single-lens reflex camera, making it possible to create highly accurate reproductions of crystal shapes with a minimum size of 4 mm. This method makes it possible to monitor the effect of actual conditions on the physical processes of crystal growth, which is a useful advance for the development of active device elements based on semiconductor diamonds.

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features.

Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific thermal management applications in advanced integrated circuits and this in turn is essential not only to prevent a high local temperature and overheat inside the circuit, but also generate electricity through the Seebeck effect. Here, we were able to enhance the Seebeck effect in the germanium composite quantum dots (CQDs) embedded in silicon by increasing the number of thin silicon layers inside the dot (multi-fold CQD material). The Seebeck effect in the CQD structures and multi-layer boron atomic layer-doped SiGe epitaxial films was studied experimentally at temperatures in the range from 50 to 300 K and detailed calculations for the Seebeck coefficient employing different scattering mechanisms were made.

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n/n/n-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range.

Structural Modification of Single-Layer Graphene Under Laser Irradiation Featured by Micro-Raman Spectroscopy.

Confocal micro-Raman spectroscopy is used as a sensitive tool to study the nature of laser-induced defects in single-layer graphene. Appearance and drastic intensity increase of D- and D' modes in the Raman spectra at high power of laser irradiation is related to generation of structural defects. Time- and power-dependent evolution of Raman spectra is studied.

Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application.

A hybrid structure, which integrates the nanostructured silicon with a bio-active silicate, is fabricated using the method of MHz sonication in the cryogenic environment. Optical, atomic force, and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy were used for the investigation of the morphology and chemical compound of the structured surface. Micro-Raman as well as X-ray diffraction, ellipsometry, and photovoltage spectroscopy was used for the obtained structures characterization.

Structural transformation of Bi1-x/3V1-xMoxO4 solid solutions for light-driven water oxidation.

The influence of molybdenum content in the solid solutions of Bi1-x/3V1-xMoxO4 (x = 0.05-0.20) on the morphology, band gap, structure and light-driven water oxidation properties has been studied by scanning electron microscopy, X-ray powder diffraction and vibrational spectroscopy (Raman and infrared).

Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes.

Micro-Raman spectra of single-walled carbon nanotubes in the range of two-phonon 2D bands are investigated in detail. The fine structure of two-phonon 2D bands in the low-temperature Raman spectra of the mixture and individual single-walled carbon nanotubes is considered as the reflection of structure of their π-electron zones. The dispersion behavior of 2D band fine structure components in the resonant Raman spectra of single-walled carbon nanotube mixture is studied depending on the energy of excitating photons.

Possibility of graphene growth by close space sublimation.

Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process.

Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment.

Silicon-rich Al2O3 films (Six(Al2O3)1-x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.