Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980-990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface.

Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.

An approach aimed at increasing the radiative efficiency in heterostructures operating in a single vertical mode at 1060 nm has been studied. Two types of heterostructures-the STJH (single tunnel junction heterostructure) and DTJH (double tunnel junction heterostructure)-have been developed to obtain the operation of a single waveguide mode of the first and second order, respectively. A multiple increase in the injection efficiency is realized by using tunnel junctions (TJs) embedded in the wide-gap barriers and placed between the active regions.

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively.

Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.

An external cavity in Littrow configuration based on a reflective diffraction grating and a high-power semiconductor laser based on an asymmetric heterostructure with low optical loss was studied. A continuous-wave optical output power of 13 W with a linewidth of 0.15 nm was achieved for an external-cavity laser.